PART |
Description |
Maker |
UT6164C32 UT6164C32Q-6 UT6164C32T-6 |
64K X 32 SYNCHRONOUS PIPELINED BURST CMOS SRAM
|
UTRON Technology ETC[ETC]
|
UT6164C64AQ-5 UT6164C64AQ-6 UT6164C64AT-6 UT6164C6 |
64K X 64 SYNCHRONOUS PIPELINED BURST CMOS SRAM
|
UTRON Technology ETC[ETC]
|
GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100 117MHz 11ns 64K x 32 2M synchronous burst SRAM 138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
UT6164C64AQ-6 |
64K X 64 SYNCHRONOUS PIPELINED BURST CMOS SRAM 64K的64 SYNCHRONOU拧流水线突发的CMOS的SRAM
|
Electronic Theatre Controls, Inc.
|
CY7C1303AV25-100BZC CY7C1306AV25-100BZC CY7C1303AV |
Memory : Sync SRAMs 18-Mb Burst of 2 Pipelined SRAM with QDR(TM) Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR⑩ Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR?/a> Architecture
|
Cypress Semiconductor
|
GS820322T-138 GS82032T-66 GS82032Q-150 GS82032Q-5I |
66MHz 18ns 64K x 32 2M synchronous burst SRAM PROGRAMMER UNIVERSAL 40-PIN 64K x 32 / 2M Synchronous Burst SRAM 64K x 32 2M Synchronous Burst SRAM 64K的32 200万同步突发静态存储器 PROGRAMMER UNIV W/USB 48-PIN 64K的32 200万同步突发静态存储器 .56UF/100VDC METAL POLY CAP 64K的32 200万同步突发静态存储器 64K X 32 CACHE SRAM, 11 ns, PQFP100
|
GSI Technology List of Unclassifed Manufacturers Electronic Theatre Controls, Inc.
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IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100 25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
|
Integrated Device Technology, Inc. IDT
|
K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36 512Kx16 bit Low Power Full CMOS Static RAM 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Cypress Semiconductor, Corp. Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IDT71P73204250BQ IDT71P73104250BQ IDT71P73804250BQ |
18Mb Pipelined DDR⑩II SRAM Burst of 4 18Mb Pipelined DDR垄芒II SRAM Burst of 4
|
Integrated Device Technology
|
CY7C1305AV18 CY7C1305AV18-100BZC CY7C1305AV18-133B |
18-Mb Burst of 4 Pipelined SRAM with QDR(TM) Architecture 18-Mb Burst of 4 Pipelined SRAM with QDR⑩ Architecture
|
Cypress Semiconductor
|
IDT70V9189L 70V9189_DS_29539 |
HIGH-SPEED 3.3V 64K x 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM From old datasheet system
|
IDT
|